smd type features adoption of fbet, mbit processes high breakdown voltage and large current capacity absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 6v collector current i c 2a collector current (pulse) i cp 3a p c 500 mw p c* 1.5 w jumction temperature t j 150 storage temperature range t stg -55to+150 * mounted on ceramic board (250 mm 2 x 0.8 mm) collector power dissipation electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = 100v , i e = 0 100 na emitter cut-off current i ebo v eb =4v,i c = 0 100 na collector-base breakdown voltage v (br)cbo i c = 10ua , i e = 0 120 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 100 v emitter-base breakdown voltage v (br)ebo i e = 10ua , i c =0 6 v dc current gain h fe v ce =5v,i c = 100ma 100 400 collector-emitter saturation voltage v ce(sat) i c =1a,i b = 100ma 0.22 0.6 v base-emitter saturation voltage v be(sat) i c =1a,i b = 100ma 0.85 1.2 v gain-bandwidth product f t v ce = 10v , i c = 100ma 120 mhz collector output capacitance c ob v cb = 10v , i e = 0 , f = 1mhz 25 pf turn-on time t on 80 storage time t stg 750 fall time t f 40 ns see test circuit. sales@twtysemi.com 1 of 3 http://www.twtysemi.com 2SC3647 product specification 4008-318-123
smd type electrical characteristics curves test circuit h fe classification marking rank r s t h fe 100 200 140 280 200 400 cc sales@twtysemi.com 2 of 3 http://www.twtysemi.com 2SC3647 product specification 4008-318-123
smd type 2SC3647 sales@twtysemi.com 3 of 3 http://www.twtysemi.com product specification 4008-318-123
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